场效应管 FSP5N60 HFP8N60 HFP8N60S

FSP5N60,MOS,600V,4.5A HFP8N60S,MOS,600V,7.5A,1.2Ω,220

Features
■  4.5A,600v,RDS(on)=2.2?@VGS=10V
■ Gate charge (T*ical 17nC)             
■ High ruggedness                     
■  Fast switching                      
■  100% AvalancheTested                
■  Improved dv/dt capability
 

General Description  
This Power    MOSFET is    produced using Faircard’s advanced  planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics .  This power  MOSFET  is  usually used at AC  adaptors, on the battery charger   and SMPS