*现货供应 高频三*管2SC3356

DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROW*E LOW *ISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985?
D*CRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATUR*
? Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
? High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 G01C
Storage Temperature Tstg G0265 to +150 G01C
ELE*RICAL CHARA*ERISTICS (TA = 25 G01C)
CHARA*ERISTIC SY*OL MIN. TYP. MAX. UNIT T*T CONDITIONS
Collector Cutoff Current ICBO 1.0 G01*CB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 G01*EB = 1.0 V, IC = 0
DC Current Gain hFE*0 VCE = 10 V, IC = 20 mA
Gain Bandwidth Product fT 7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance Cre** 0.55 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain G01S21eG01
2
11.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW G03 350 G01s, Duty Cycle G03 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Cl*ification
Cl* R23/Q * R24/R * R25/S *
Marking R23 R24 R25
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNE*IONS
1.
2.
3.
Emitter
Base
Collector
2.8&plu*n;0.2
2.9&plu*n;0.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1 ?
0.05


0.4
+0.1 ?
0.05
0.16
+0.1 ?
0.06
0.65
+0.1
?0.15
123