供应单向可控硅,BT152,152,WINSEMI

地区:广东 深圳
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深圳市恒丰德电子有限公司

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品牌:为先(WinSemi) 型号:BT152 控制方式:单向 *数:三* 封装材料:金属封装 封装外形:平底形 关断速度:普通 散热功能:带散热片 功率特性:大功率 频率特性:中频 额定正向平均电流:20(A) 控制*触发电压:600(V) 控制*触发电流:15(mA) 正向重复峰值电压:1.5(V) 反向阻断峰值电压:200(V)

Symbol
Parameter
Condition
Value
Units
VDRM
Repetitive Peak Off-State Voltage
600
V
IT(*)
Average On-State Current
Half Sine Wave:Tc=62℃
12.7
A
IT(RMS)
R.M.S On-State Current
All Conduction Angle
20
A
ITSM
Surge On-State Current
1/2Cycle,60Hz,Sine Wave
Non-Repetitive
220
A
I2t
I2t for Fusing
t=8.3ms
242
A2s
di/dt
Critical rate of rise of on-state current
50
A/μs
PGM
Forward Peak Gate Power Dissipation
20
W
PG(*)
Forward Average Gate Power Dissipation
0.5
W
IFGM
Forward Peak Gate Current
5.0
A
VRGM
Reverse Peak Gate Voltage
5.0
V
TJ
Operating Junction Temperature
-40~150
TSTG
Storage Temperature
-40~150

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