供应单向可控硅,BT152,152,WINSEMI
地区:广东 深圳
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Symbol | Parameter | Condition | Value | Units |
VDRM | Repetitive Peak Off-State Voltage | 600 | V | |
IT(*) | Average On-State Current | Half Sine Wave:Tc=62℃ | 12.7 | A |
IT(RMS) | R.M.S On-State Current | All Conduction Angle | 20 | A |
ITSM | Surge On-State Current | 1/2Cycle,60Hz,Sine Wave Non-Repetitive | 220 | A |
I2t | I2t for Fusing | t=8.3ms | 242 | A2s |
di/dt | Critical rate of rise of on-state current | 50 | A/μs | |
PGM | Forward Peak Gate Power Dissipation | 20 | W | |
PG(*) | Forward Average Gate Power Dissipation | 0.5 | W | |
IFGM | Forward Peak Gate Current | 5.0 | A | |
VRGM | Reverse Peak Gate Voltage | 5.0 | V | |
TJ | Operating Junction Temperature | -40~150 | ℃ | |
TSTG | Storage Temperature | -40~150 | ℃ |
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