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Part Number(编码) | Chip(晶片) | ||
1W白色 | Material(材料) | Emitting(颜色) | 入P(nm) |
InGaN | WHITE | / |
Parameter(参数) | Symbol | MIN | TYP | MAX | UNIT | T*T CONDITION |
Forward Voltage(顺向电压) | VF | 3.0 | / | 3.4 | V | If=350mA |
Domi Wavelength(主波长) | λd | / | / | / | nm | |
Reverse Current(反向电流) | IR | 10 | μA | VR=5V | ||
Power dissipation (消耗功率) | Pd | 1000 | mW | |||
Luminous Intensity (发光强度) | IV | 80 | / | 100 | LM | If=350mA |
Peak Forward Current (顺向电流峰值) | If(Peak) | 500 | mA | |||
Recommend Forward Current (顺向电流) | If(Rec) | 350 | mA | |||
Electrostatic Discharge (静电释放) | *D | 2000 | V |
1.BSOLUTE MAXIMUM RATINGS:(Ta=25℃)
2.OPERATING TEMPERATURE:—40℃TO80℃ (操作温度)
3.LEAD SOLDERING:260℃FOR 5 SECONDS(焊接条件)4. 储存条件:25℃以下60%湿度以下.