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Part Number(编码) | Chip(晶片) | ||
Material(材料) | Emitting(颜色) | 入P(nm) | |
InGaN | RED | 625 |
Parameter(参数) | Symbol | MIN | TYP | MAX | UNIT | T*T CONDITION |
Forward Voltage(顺向电压) | VF | 2.0 | / | 2.2 | V | If=20mA |
Domi Wavelength(主波长) | λd | 622 | / | 627 | nm | |
Reverse Current(反向电流) | IR | 10 | μA | VR=5V | ||
Power dissipation (消耗功率) | Pd | 70 | mW | |||
Luminous Intensity (发光强度) | IV | 1300 | / | 1600 | mcd | If=20mA |
Peak Forward Current (顺向电流峰值) | If(Peak) | 50 | mA | |||
Recommend Forward Current (顺向电流) | If(Rec) | 20 | mA | |||
Electrostatic Discharge (静电释放) | *D | 2000 | V |
1.BSOLUTE MAXIMUM RATINGS:(Ta=25℃)
2.OPERATING TEMPERATURE:—40℃TO80℃ (操作温度)
3.LEAD SOLDERING:260℃FOR 5 SECONDS(焊接条件)4. 储存条件:25℃以下60%湿度以下.