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2、香港交货或大陆含税交货。
NPN SILICON POWER TRANSISTORS
D*CRIPTION
These devices are designed for high–voltage, high–speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V SWITCHMODE.
FEATUR*
* Reverse biased SOA with inductive load @ Tc=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
T*ical tc = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
订货详细信息如下(自订货之日起五个工作日交货给客户):
现货库存为C档或D档:
否
UTC(台湾友顺)
MJE13003L-C
功率
1.5(A)
10(MHz)
平面型
TO-126
金属封装