800V高压场效应管 10N80

800V N-CHANNEL POWER MOSFET
D*CRIPTION
The UTC 10N80 uses UTC’s advanced proprietary, planar
stripe, DMOS technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATUR*
* RDS(ON) = 1.1Ω @VGS = 10 V
* Ultra low gate charge ( t*ical 45 nC )
* Low reverse transfer capacitance ( CRSS = t*ical 15 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness