IR品牌低阻值低压MOS管 SI4410DY

品牌/商标	IR美国国际整流器公司	型号/规格	SI4410
种类	*缘栅(MOSFET)	沟道类型	N沟道
导电方式	增强型	封装外形	SMD(SO)/表面封装
材料	N-FET硅N沟道	*间电容	106（pF）
大漏电流	10000（mA）	*大耗散功率	2500（mW）

*一直都有现货，并且*供应！

Si4410DYPbF HEXFET Power MOSFET

VDSS = 30V RDS(on) = 0.0135Ω
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
Parameter Max. Units
RθJA Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
This N-channel HEXFET Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low onresistance
and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in t*ical board
mount applications.