场效应管 4N60 T0252

供应UTC 仕兰微  品牌充电器，电源*mos管。

封装：TO-251(DIP) ; TO-252(SMD    

1、TO-251小插件封装。80PCS/管。1N60 2N60 3N60 4N60

 2.TO-252贴片1N60 2N60 3N60 4N60

1 Amps, 600/650 Volts N-CHANNEL MOSFET
D*CRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.

FEATUR*
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (t*ical 5.0nC)
* Low reverse transfer capacitance (CRSS = t*ical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

2、韩产*MOS管。

3、现货*供应。珠三角支持快递代收，*支持支付宝。

1、TO-251小插件封装。80PCS/管。

1 Amps, 600/650 Volts N-CHANNEL MOSFET
D*CRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.

FEATUR*
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (t*ical 5.0nC)
* Low reverse transfer capacitance (CRSS = t*ical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

2、韩产*MOS管芯片。

3、现货*供应。珠三角支持快递代收，*支持支付宝。