IRFZ44N /IRFZZ24N 国际整流器IR场效应MOS管

深圳市铭芯杰电子是一家*从事二*管三*管 光耦 单片机 场效应NXP ON FAIRCHILD ST MIC IR 等系列产品的电子元器件商行.本商行只经销原装*产品,高质量的产品,*了广大客户的信赖与支持. 大量原装现货,为客户提供了稳定的渠道.欢迎新老客户光临指导.

主营二*管：稳压二*管，快速二*管，*快速二*管，整流二*管，肖特基，快恢复，开关二*管，整流桥堆。主要封装有：SMA，S*，SMC，DO-35，DO-41，DO-15，DO-27，DO-201，P-600，DIP-4，WOB，SMD-4，MD，扁桥，排桥，方桥等。

主营三*管：肖特基，MOS场效应，三端稳压，达林顿，晶体三*管，快恢复三*管，开关三*管。封装有：TO-92，TO-126，TO-220，TO-*，TO-247，TO-263，TO-252，TO-251，SOT-23，SOT-323，SOT-89，SOT-223等。

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current 160
PD @TC = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage &plu*n; 20 V
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy 9.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)