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中红外*LED23系列
波长2.3 - 2.39um
开关时间 30ns
使用温度-240度至50度
TO-18封装
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.
Light Emitting Diodes with central wavelength
2,31 mm series are based on heterostructures
grown on GaSb substrates by LPE. Solid
solutions GaInAsSb are used in the active
layer. Wide band gap solid solutions
AlGaAsSb with Al content 64% are used for
good electron confinement.