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中红外*LED39系列
波长3.8- 4.0um
开关时间 30ns
使用温度-240度至50度
TO-18封装
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.
Light Emitting Diodes with central
wavelength 3,90 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.