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IBSG中红外发光二*管LED37

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品牌:IBSG 型号:LED37-XX 种类:光学发射器件 波段范围:中红外 运转方式:可调谐式 激励方式:电激励式 工作物质:半导体 光路径:反射型外光路 输出形式:功率型 传输信号:单电源型 速度:* 通道:单通道 输出波长:1600-5000（nm） 线宽:1（mm）

中红外*LED37系列


波长3.70 - 3.85um

开关时间 30ns

使用温度-240度至50度

TO-18封装

Light Emitting Diodes with central
wavelength 3,75 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.

Light Emitting Diodes with central
wavelength 3,75 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.

Light Emitting Diodes with central
wavelength 3,75 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.

Light Emitting Diodes with central
wavelength 3,75 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.

Light Emitting Diodes with central
wavelength 3,75 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.

Light Emitting Diodes with central
wavelength 3,75 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.

Light Emitting Diodes with central
wavelength 3,75 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.

Light Emitting Diodes with central
wavelength 3,75 mm series are based on
heterostructures grown on InAs substrates
by MOCVD. InAsSb is used in the active
layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for
good electron confinement.