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■Absolute Maximum Ratings(Ta=25°
Parameter | Symbol | Rating | Unit | ||
Input | Forward current | IF | 50 | mA | |
*1 Peak forward current | IFM | 1 | A | ||
Reverse voltage | VR | 6 | V | ||
Power dissipation | P | 70 | mW | ||
Output | Collector-emitter voltage | VCEO | *4 | 80 | V |
Emitter-collector voltage | VECO |
| 6 | V | |
Collector current | IC |
| 50 | mA | |
Collector power dissipation | PC |
| 150 | mW | |
Total power dissipation | Ptot |
| 200 | mW | |
*2 Isolation voltage | Viso (rms) |
| 5.0 | kV | |
Operating temperature | Topr | −30 to 100 | °C | ||
Storage temperature | Tstg | −55 to 125 | °C | ||
*3 Soldering temperature | Tsol | 260 | °C |
*1 Pulse width≤100μs, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1minute, f=60Hz
*3 For 10s
*4 Up to Date code "P7" (July 2002) VCEO : 35V.
■Electro-optical Characteristics
Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit | |||
Input | Forward voltage | VF | IF=20mA | − | 1.2 | 1.4 | V | ||
Peak forward voltage | VFM | IFM=0.5A | − | − | 3.0 | V | |||
Reverse current | IR | VR=4V | − | − | 10 | µA | |||
Terminal capacitance | Ct | V=0, f=1kHz | − | 30 | 250 | pF | |||
Output | Collector dark current | ICEO | VCE=50V, IF=0 | − | − | 100 | nA | ||
Collector-emitter breakdown voltage | BVCEO | IC=0.1mA, IF=0 | *5 | 80 | − | − | V | ||
Emitter-collector breakdown voltage | BVECO | IE=10µA, IF=0 |
| 6 | − | − | V | ||
Transfer characteristics | Collector current | IC | IF=5mA, VCE=5V |
| 2.5 | − | 30.0 | mA | |
Collector-emitter saturation voltage | VCE (sat) | IF=20mA, IC=1mA |
| − | 0.1 | 0.2 | V | ||
Isolation resistance | RISO | DC500V, 40 to 60%RH | 5×1010 | 1×1011 | − | ? | |||
Floating capacitance | Cf | V=0, f=1MHz | − | 0.6 | 1.0 | pF | |||
Cut-off frequency | fc | VCE=5V, IC=2mA, RL=100?, −3dB | − | 80 | − | kHz | |||
Response time | Rise time | tr | VCE=2V, IC=2mA, RL=100? | − | 4 | 18 | µs | ||
Fall time | tf | − | 3 | 18 | µs |
*5 From the production Date code "J5" (May 1997) to "P7" (July 2002), however the products were screened by BVCEO≥70V.
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Sharp/夏普
PC817
光电耦合器
远红外
单模式
电激励式
半导体
内光路
光敏器件型
双电源型
低速
双通道
10(nm)
100(mm)