原装NXP可控硅BT139-600E

SY*OL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDRM

Repetitive peak off-state

voltages

-

-500

5001

-600

6001

-800

800

V

IT(RMS)ITSM

RMS on-state current Non-repetitive peak

full sine wave; Tmb £99 °C full sine wave; Tj= 25 °C prior to

-

16

A

on-state current

surge

t = 20 ms

-

140

A

t = 16.7 ms

-

150

A

I2t

I2t for fusing

t = 10 ms

-

98

A2s

dIT/dt

Repetitive rate of rise of

ITM= 20 A; IG= 0.2 A;

on-state current after

dIG/dt = 0.2 A/ms

triggering

T2 G

-

50

A/ms

T2 G-T2- G-

--

50 50

A/ms A/ms

T2- G

-

10

A/ms

IGM

Peak gate current

-

2

A

VGM

Peak gate voltage

-

5

V

PGM

Peak gate power

-

5

W

PG(*)TstgTj

Average gate power Storage temperature Operating junction

over any 20 ms period

--40 -

0.

W °C °C

temperature