供应半导体硅光电池

Part No.：PD498C-RT1 UNIT：mm

Parameter

Symbol

MIN.

TYP.

MAX.

UNIT

T*T CONDITION

Forward Voltage

V_F

0.5

1.3

V

I_F＝10 mA H＝0

Reverse Break Down Voltage

B_VR

35

V

I_R=100uA H=O

Junction Capacitance

C_J

15

pF

VR＝3V H＝0 F＝1 MHz

Reverse Dark current

I_D

10

nA

V_R=10V H=0

Light Current

I_L

40

uA

V_R=5 V H=1mw/cm2 @940nm

Open-Circuit Voltage

V_OC

0.35

V

Ee=5mW/c㎡

Short-Circuit Current

I_SC

66

uA

Total Capacitance

Ct

25

pF

H=0 f=1MHZ V_R=3V

RiseTime(10％to90％)

t_r

10

uS

V_R=5V R_L=100ohms

Fail Time(90％to10％)

t_f

10

Power dissipation

P_D

170

mW

Wavelength of Peak Sensitivity

λp

940

nm

Range of Spectral Bandwidth

λ0.5

400

1200

nm