供应场效应管WFP7N60

 7A,600V,RDS(on)(Max 1.2Ω)@VGS=10V
 Ultra-low Gate Charge(Typical 29nC)
 Fast Switching Capability
 100%Avalanche Tested
 Isolation Voltage(VISO=4000V AC)
 Maximum Junction Temperature Range(150℃)

General Description
This Power  MOSFET is  produced using Winsemi's  advanced
planar stripe,VDMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have  a high
rugged  avalanche characteristics.  This devices is specially well
suited  for half  bridge and full  bridge resonant topology  line a 
electronic  lamp  ballast,high  efficiency switched  mode power 
supplies, active power factor correction.