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HLD80810WH3U 808nm 10W 30℃ Laser Diodes
Specifications: ■Absolute Maximum Ratings (Tc=25℃)
Characteristics | Symbols | Ratings | Units |
Optical Output | Po | 10 | W |
Reverse Voltage | Vr | 2 | V |
Operating Temperature | Top | -10~+30 | ℃ |
Storage Temperature | Tstg | -20~+85 | ℃ |
Device Laser Diode
Package T*e C-mount-b
Aperture Size 600*1 um
■Electrical and optical Characteristics(Tc=25℃)
Characteristics | Symbols | Conditions | Min | T* | Max | Units | |
Threshold Current | Ith | - | - | 1.1 | 1.5 | A | |
Operating Current | Iop | Po=10W | - | 10 | 10.5 | A | |
Operating Voltage | Vop | Po=10W | - | 2.0 | 2.3 | Volts | |
Slope Efficiency | η | - | - | 1.2 | 1.5 | W/ A | |
Beam Divergence (FWHM) | Parallel | θ‖ | Po=10W | 8 | 10 | 12 | deg |
Perpendicular | θ⊥ | Po=10W | 32 | 36 | 38 | deg | |
Lasing Wavelength | λp | Po=10W | 805 | 808 | 812 | nm | |
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"
是
激光管
是
BLASER
HLD808010WH3U
砷化镓(GaAs)
808nm+/-3nm 10w
激光夜视