广州晶丰—东光MOS-DG2N65N 沟道增强型场效应晶体管

产品概述General Description                                                                          

DG2N65是N沟道增强型场效应晶体管，应用了东光微电的相关专利技术，采用自对准平面工艺及先进的终端耐压技术，降低了导通损耗，提高了开关特性，增强了雪崩耐量。该产 品能应用于多种功率开关电路，使得电源能效更高，系统更加小型化。

DG2N65 is an N-channel enhancement mode MOSFET, which is produced using Dongguang Micro-electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching

circuit for higher efficiency and system miniaturization.