晶体管

产品参数；

产品种类:    MOSFET          晶体管极性:   P-Chnnel  ，      汲极/源极击穿电压:    20v

漏极连续电流:   42A           电阻汲极/源极 RDS（导通）:     1.95mOhms

最大工作温度:  +150C        正向跨导 gFS（最大值/最小值） :    95S

最小工作温度；   15 C        功率耗散:     6250 mW

配置:     Single Quad Drain Triple Source

用于最新设计的尖端技术。

Features：MOSFETs feature the newest generation of p-channel silicon technology, enabling these devices to provide industry-best on-resistance specifications, such as 1.9 milliohms in the PowerPAK® SO-8. With on-resistance as low as half the level of the next best devices on the market, Vishay Siliconix TrenchFET Gen III P-Channel power MOSFETs provide lower conduction losses for higher efficiency and longer time between charges for battery-operated applications.