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产品种类: MOSFET 晶体管极性: P-Chnnel , 汲极/源极击穿电压: 20v
漏极连续电流: 42A 电阻汲极/源极 RDS(导通): 1.95mOhms
最大工作温度: +150C 正向跨导 gFS(最大值/最小值) : 95S
最小工作温度; 15 C 功率耗散: 6250 mW
配置: Single Quad Drain Triple Source
用于最新设计的尖端技术。
Features:MOSFETs feature the newest generation of p-channel silicon technology, enabling these devices to provide industry-best on-resistance specifications, such as 1.9 milliohms in the PowerPAK® SO-8. With on-resistance as low as half the level of the next best devices on the market, Vishay Siliconix TrenchFET Gen III P-Channel power MOSFETs provide lower conduction losses for higher efficiency and longer time between charges for battery-operated applications.
SI7137DP-GE3
Vishay
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