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桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
S9013(GM9013)
■FEATUR*特點
Excellent HFE Linearity HFE線性特性極好
hFE(2)=25(Min.) at VCE=6V,Ic=400mA.
Complementary to S9012(GM9012)与S9012(GM9012)互补
■MAXIMUM RATINGS*大額定值(Ta=25℃)
Characteristic
特性參數
| Symbol
*號
| Rating
額定值
| Unit
單位
|
Collector-Base voltage
集電極-基極電壓
| VCBO
| 40
| Vdc
|
-Collector-Emitter Voltage
集電極-發射極電壓
| VCEO
| 30
| Vdc
|
Emitter-Base voltage
發射極-基極電壓
| VEBO
| 5.0
| Vdc
|
Collector Current-Continuous
集電極電流-連續
| Ic
| 500
| mAdc
|
Base-Current
基極電流
| IB
| 50
| mAdc
|
Collector Power Dissipation
集電極耗散功率
| PC
| 300
| mW
|
Junction Temperature
結溫
| Tj
| 150
| ℃
|
Storage Temperature Range
儲存溫度
| Tstg
| -55~150
| ℃
|
■DEVICE MARKING打標
S9013(GM9013)=J3
|
■ELE*RICAL CHARACRTERISTICS電特性
(TA=25℃ unless otherwise noted如無*說明,溫度爲25℃)
Characteristic
特性參數
| Symbol*號
| Test Condition
測試條件
| Min
*小值
| TYP
典型值
| Max
*大值
| Unit
單位
|
Collector Cutoff Current
集電極截止電流
| ICBO
| VCB=35V,IE=0
| —
| —
| 0.1
| μA
|
Emitter Cutoff Current
發射極截止電流
| IEBO
| VEB=5V,IC=0
| —
| —
| 0.1
| μA
|
Collect-Base Breakdown Voltage
集電極-基極擊穿電壓
| V(BR)CBO
| IC=100μA
| 40
| —
| —
| V
|
Collect-Base Breakdown Voltage
集電極-基極擊穿電壓
| V(BR)CEO
| IC=1.0mA
| 30
| —
| —
| V
|
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓
| V(BR)EBO
| IE=100μA
| 5
| —
| —
| V
|
DC Current Gain
直流電流增益
| hFE(1)
| VCE=1V,IC=100mA
| 70
| —
| 400
| —
|
hFE(2)
| VCE=6V,IC=400mA
| 25
| —
| —
| ||
Collector-Emitter Saturation Voltage
集電極-發射極飽和壓降
| VCE(sat)
| IC=500mA, IB=50mA
| —
| —
| 0.6
| V
|
Base-Emitter Saturation Voltage
基極-發射極電壓
| VBE
| VCE=1V,IC=100mA
| —
| 0.8
| 1.0
| V
|
Transition Frequency
特徵頻率
| fT
| VCE=6V,IC=20mA
| 150
| 300
| —
| MHz
|
Collector Output Capacitance
輸出電容
| Cob
| VCB=6V,IE=0,
f=1MHz
| —
| 7.0
| 10
| pF
|
地址:桂林市*高新区信息产业园D-8号
电话:852696(座机)/5858088(总机)
联系人:杨明瞻 (工厂业务负责)
传真:825199
是
桂微
S9013
放大
硅
NPN型
0.5(A)
典型值300(MHz)
平面型
塑料封装
塑料封装