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产品概述:X to Ku BAND SUPER LOW *ISE AMPLIFIER
N-CHANNEL HJ-FET
D*CRIPTION
The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and *ociated gain make it suitable for DBS and another commercial systems.
FEATUR*
• Super Low Noise Figure & High Associated Gain
NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg £ 0.20 mm
• Gate Width : Wg = 160 mm
否
NEC/日本电气
NE4210S01
微波
硅(Si)
NPN型
0(V)
0(A)
0(W)
0(MHz)
平面型
贴片型
塑料封装
其他IC