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AP30G120SW AP30G120W AP30G120ASW AP30G120BSW-HF APEC全系列,优势供应!
Description |
Description
BVC*:1200v
▼ High speed switching
▼ Low Saturation Voltage
VCE(sat)=3.0V@IC=30A
▼ RoHS Compliant
▼ CO-PAK, IGBT with FRD
PACK:TO-*
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. | ||||||||||||||||||||||
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Description |
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. | ||||||||||||||||||||||
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Description |
BVC* | 1200V |
Vgs | ±30V |
Vce(sat) / Max(V) Vgs@15V | 3.6 |
Vce(sat) / Max(V) | |
Vce(sat) / Max(V) | |
ICP(A) | 60 |
PD(W) | 208 |
Configuration | Single N |
Package | TO-* |
BVC* | 1200V |
Vgs | ±30V |
Vce(sat) / Max(V) Vgs@15V | 3.6 |
Vce(sat) / Max(V) | |
Vce(sat) / Max(V) | |
ICP(A) | 60 |
PD(W) | 208 |
Configuration | Single N |
Package | TO-* |
Description |
AP30G120SW AP30G120W AP30G120ASW AP30G120BSW-HF
APEC
无铅*型