RA30H3340M是30-watt RF的MOSFET放大器模块12.5-volt移动电台在向工作在330-400-MHz范围.电池可以直接连接到漏极增强型MOSFET晶体管.如果没有门电压(VGG进入=0V),只有一小漏电流排水和输入信号衰减的RF高达60 dB.输出功率和漏电流增加门极电压上升.与周围4V（），输出功率和电压门漏电流大幅增加.额定输出功率变在4.5V（典型值）和5V（最大）提供.在VGG=5V,的典型栅极电流1 mA.该模块是专为非线性调频调制，但可能也可用于线性调制通过设置静态漏电流随栅极电压和输出功率控制输入功率.
特征
?增强型MOSFET晶体管(IDD?0@ VDD=12.5V, VGG=0V)
? Pout>30W,ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
?宽带频率范围：330-400MHz
?低功耗控制电流IGG=1mA (typ)在VGG=5V
? 66 x 21 x 9.8 mm
?线性操作有可能通过设置静态漏电流随栅极电压和输出功率控制与输入功率
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