批发供应场效应管ST2302

N Channel Enchancement Mode MOSFET     ST2302

3.6A

D*CRIPTION

The ST2302 is the N-Channel logic enhancement mode power field effect transistor are
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other batter powered circuits, and low in-line
power loss are needed in a very *all outine surface mount package.

FEATURE
z 20V/3.6A, RDS(ON) = 80m-ohm
@VGS = 4.5V
z 20V/2.4A, RDS(ON) = 95m-ohm
@VGS = 2.5V
z Super high density cell design for
extremely low RDS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23-3L package design