光耦TLP291

Manufacturer:

Toshiba

RoHS:

Details

Maximum Collector Emitter Voltage:

80 V

Maximum Collector Emitter Saturation Voltage:

0.4 V

Isolation Voltage:

2500 Vrms

Current Transfer Ratio:

400 %

Maximum Forward Diode Voltage:

1.4 V

Maximum Input Diode Current:

50 mA

Maximum Collector Current:

50 mA

Maximum Power Dissipation:

170 mW

Maximum Operating Temperature:

+ 110 C

Minimum Operating Temperature:

- 55 C

Package / Case:

SO-16

Packaging:

Bulk

Forward Current:

50 mA

Maximum Fall Time:

3 us

Maximum Reverse Diode Voltage:

5 V

Maximum Rise Time:

2 us

Number of Channels per Chip:

4 Channels

Output Device:

NPN Phototransistor

Power Supplies
Programmable Controllers
Hybrid ICs
TLP291 consists of photo transistor, optically coupled to a gallium arsenide
infrared emitting diode. TLP291 is housed in the SO4 package, very small
and thin coupler.
Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 °C)
and high isolation voltage (3750Vrms), it’s suitable for high-density surface
mounting applications such as small switching power supplies and
programmable controllers.
􀁺 Collector-Emitter Voltage : 80 V (min)
􀁺 Current Transfer Ratio : 50% (min)
Rank GB : 100% (min)
􀁺 Isolation Voltage : 3750 Vrms (min)
􀁺 Operation temperature: -55 to 110 °C
􀁺 UL recognized : UL1577, File No. E67349
􀁺 cUL approved : CSA Component Acceptance Service No.5A,
File No. 67349
􀁺 SEMKO aprroved: EN 60065: 2002, Approved no. 1200315

型号/规格

TLP291

品牌/商标

TI（德州仪器）

供应光耦TLP291