无锡固电ISC 供应TIP120三极管

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供应TIP120三极管,TO-220,有意者请联系!

DESCRIPTION

·High DC Current Gain-

: hFE= 1000(Min)@IC=3A

·Collector-Emitter Sustaining Voltage-

  : VCEO(SUS)= 60V(Min)

·Low Collector-Emitter Saturation Voltage-

  :VCE(sat)= 2.0V(Max)@ IC=3A

= 4.0V(Max)@ IC=5A

·Complement to Type TIP125

 

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

 

ABSOLUTE MAXIMUM RATINGS (Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

8

A

IB

Base Current

120

mA

PC

Collector Power Dissipation

TC=25

65

W

Collector Power Dissipation

Ta=25

2

Tj

Junction Temperature

150

Tstg

StorageTemperature Range

-65~150

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.1A, IB= 0

60

 

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A ,IB= 12mA

 

 

2.0

V

VCE(sat)-2

Collector-Emitter Saturation voltage

IC= 5A ,IB= 20mA

 

 

4.0

V

VBE(on)

Base-Emitter On Voltage

IC= 3.0A ; VCE= 3V

 

 

2.5

V

ICBO

Collector Cutoff Current

VCB= 60V, IE= 0

 

 

0.2

mA

ICEO

Collector Cutoff Current

VCE= 30V, IB= 0

 

 

0.5

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

 

2

mA

hFE-1

DC Current Gain

IC= 0.5A; VCE= 3V

1000

 

 

 

hFE-2

DC Current Gain

IC= 3.0A; VCE= 3V

1000

 

 

 

COB

Output Capacitance

IE= 0; VCB= 10V, f= 0.1MHz

 

 

200

pF

是否提供加工定制

品牌/商标

ISC

型号/规格

TIP120

应用范围

达林顿

材料

硅(Si)

极性

NPN型

集电极允许电流ICM

5(A)

集电极耗散功率PCM

65(W)

结构

平面型

封装形式

直插型

封装材料

塑料封装