无锡固电ISC TIP120三极管

供应TIP120三极管,TO-220,有意者请联系！

DESCRIPTION

·High DC Current Gain-

: h_FE= 1000(Min)@I_C=3A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 60V(Min)

·Low Collector-Emitter Saturation Voltage-

:V_CE(sat)= 2.0V(Max)@ I_C=3A

= 4.0V(Max)@ I_C=5A

·Complement to Type TIP125

APPLICATIONS

·Designed for general purpose amplifier and low speed

switching applications.

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	60	V
V_CEO	Collector-Emitter Voltage	60	V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current-Continuous	5	A
I_CM	Collector Current-Peak	8	A
I_B	Base Current	120	mA
P_C	Collector Power Dissipation T_C=25℃	65	W
P_C	Collector Power Dissipation T_a=25℃	2	W
T_j	Junction Temperature	150	℃
T_stg	StorageTemperature Range	-65~150	℃

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= 0.1A, I_B= 0	60			V
V_CE(_sat_)-1	Collector-Emitter Saturation Voltage	I_C= 3A ,I_B= 12mA			2.0	V
V_CE_(sat)-2	Collector-Emitter Saturation voltage	I_C= 5A ,I_B= 20mA			4.0	V
V_BE_(on)	Base-Emitter On Voltage	I_C= 3.0A ; V_CE= 3V			2.5	V
I_CBO	Collector Cutoff Current	V_CB= 60V, I_E= 0			0.2	mA
I_CEO	Collector Cutoff Current	V_CE= 30V, I_B= 0			0.5	mA
I_EBO	Emitter Cutoff Current	V_EB= 5V; I_C= 0			2	mA
h_FE-1	DC Current Gain	I_C= 0.5A; V_CE= 3V	1000
h_FE-2	DC Current Gain	I_C= 3.0A; V_CE= 3V	1000
C_OB	Output Capacitance	I_E= 0; V_CB= 10V, f= 0.1MHz			200	pF

是否提供加工定制

是

品牌/商标

ISC

型号/规格

TIP120

应用范围

达林顿

材料

硅(Si)

极性

NPN型

集电极允许电流ICM

5（A）

集电极耗散功率PCM

65（W）

结构

平面型

封装形式

直插型

封装材料

塑料封装

无锡固电ISC 供应TIP120三极管