无锡固电ISC 供应MOS 厂效应管 IRF640
地区：江苏 无锡
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DESCRIPTION Drain Current –ID= 18A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on)= 0.18Ω(Max)
·Fast Switching Speed
·Low DriveRequirement
APPLICATIONS
·Designed for low voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
SYMBOL | ARAMETER | VALUE | UNIT |
VDSS | Drain-Source Voltage (VGS=0) | 200 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Drain Current-continuous@ TC=25℃ | 18 | A |
Ptot | Total Dissipation@TC=25℃ | 125 | W |
Tj | Max. Operating Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
Electrical Characteristics (Tc=25℃)
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
V(BR)DSS | Drain-Source Breakdown Voltage | VGS= 0; ID= 0.25mA | 200 |
| V |
VGS(th) | Gate Threshold Voltage | VDS= VGS; ID= 0.25mA | 2 | 4 | V |
RDS(on) | Drain-Source On-stage Resistance | VGS=10V; ID= 10A |
| 0.18 | Ω |
IGSS | Gate Source Leakage Current | VGS=±20V;VDS= 0 |
| ±100 | nA |
IDSS | Zero Gate Voltage Drain Current | VDS= 200V; VGS= 0 |
| 200 | uA |
VSD | Diode Forward Voltage | IF= 18A; VGS=0 |
| 2.0 | V |
"
isc/iscsemi
IRF640
绝缘栅(MOSFET)
N沟道
增强型
SW-REG/开关电源
P-DIT/塑料双列直插
N-FET硅N沟道
2.0（V）
