1000v,60a,IGBT模块GT60N321

图文详情
产品属性
相关推荐

High-Power Switching Applications
Fourth Generation IGBT
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs)
• Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)

型号/规格

GT60N321

品牌/商标

TOSHIBA（东芝）

环保类别

无铅环保型

供应1000v,60a,IGBT模块GT60N321