供应FLASH内存芯片K9F2808UOC-YCBO

16M x 8 Bit NAND Flash Memory ( FLASH内存芯片K9F2808UOC-YCBO)

FEATURES
• Voltage Supply : 2.7 ~ 3.6 V
• Organization
  - Memory Cell Array
    -(16M + 512K)bit x 8bit
  - Data Register 
    - (512 + 16)bit x 8bit
• Automatic Program and Erase
  - Page Program
    -(512 + 16)Byte
  - Block Erase :
    - (16K + 512)Byte
• Page Read Operation
  - Page Size
    - (512 + 16)Byte
  - Random Access      : 10µs(Max.)
  - Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
  - Program time : 200µs(Typ.)
  - Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
  - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
  - Endurance        : 100K Program/Erase Cycles
  - Data Retention : 10 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package
- K9F2808U0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2808U0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
  K9F2808U0C-Y/P(TSOP1) except package type.