供应135-175MHz,8w,12.5V射频放大模块RA08H1317M

供应135-175MHz,8w,12.5V射频放大模块RA08H1317M

FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD@0 @ VDD=12.5V, VGG=0V)
• Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
• hT>40% @ Pout=8W (VGG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power