供应600V,30A,N-CH MOS管IRG4PC50KD

供应600V,30A,N-CH MOS管IRG4PC50KD(内含二极管）

Features

Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz, and Short Circuit Rated
to 10μs @125°C, VGE = 15V
l Generation 4 IGBT design provides tighter parameter
distribution and higher efficiency than Generation 3
l IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft recovery anti-parallel diodes for use in
bridge configurations
l Industry standard TO-247AC package
Benefits
l Generation 4 IGBTs offer highest efficiencies available
l HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less/no snubbing
l Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs