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特点
·*通态电阻:
的RDS(on)1 =14MW MAX。 (VGS=10 V,ID=40 A)
的RDS(on)2=22MW MAX。 (VGS=4.0 V,ID=40 A)
·低CISS:西斯= 3200 pF(典型值)。
·内置栅*保护二*管
*对*大额定值(TA= 25°C)
漏*至源*电压VDSS60 V
栅*源*电压VGSS±20 V
漏电流(DC)ID(DC)±80
漏*电流(脉冲)注ID(脉冲)±320 A
总功率耗散(TC=25°C)PT84瓦
总功率耗散(TA= 25°C)PT1.5 W
沟道温度Tch150°C
存储温度Tstg-55到+150°C
单雪崩电流注2国际会计准则第31 A
单注2雪崩能量EAS96 MJ
注:1。 PW£10毫秒,占空比£1%
2。 TCH=25°C,RG=25 W,VGS= 20 V®0 V开始
热阻
通道案例RTH(CH-C)1.49°C / W
通道环境RTH(CH-A)83.3°C / W
FEATUR*
· Super low on-state resistance:
RDS(on)1 = 14mW MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 22mW MAX. (VGS = 4.0 V, ID = 40 A)
· Low Ciss: Ciss = 3200 pF TYP.
· Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±80 A
Drain Current (pulse) Note1 ID(pulse) ±320 A
Total Power Dissipation (TC = 25°C) PT 84 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS 31 A
Single Avalanche Energy Note2 EAS 96 mJ
Notes 1. PW £ 10 ms, Duty cycle £ 1 %
2. Starting Tch = 25 °C, RG = 25 W, VGS = 20 V ® 0 V
THERMAL R*ISTANCE
Channel to Case Rth(ch-C) 1.49 °C/W
Channel to Ambient Rth(ch-A) 83.3 °C/W
2SK3435
NEC
TO-220
普通型
直插式
散装