供应国产充电管理二合一保护IC/ME8205替代

地区:广东 深圳
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供应国产充电管理二合一保护IC/ME8205替代

N-Channel MOSFET MEM8205M6
General Description Features
MEM8205 Series Dual N-channel enhancement
mode field-effect transistor ,produced with high cell
density DMOS trench technology, which is especially
used to minimize on-state resistance. This device
particularly suits low voltage applications, and low
power dissipation.
 20V/6A
RDS(ON) =20mΩ@ VGS=4.5V,ID=4.5A
RDS(ON) =21mΩ@ VGS=3.85V,ID=3.5A
RDS(ON) =26mΩ@ VGS=2.5V,ID=3A
 High Density Cell Design For Ultra Low On-Resistance
 Surface mount package:SOT23-6L

型号/规格

ME8205

品牌/商标

SY