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供应国产充电管理二合一保护IC/ME8205替代
N-Channel MOSFET MEM8205M6
General Description Features
MEM8205 Series Dual N-channel enhancement
mode field-effect transistor ,produced with high cell
density DMOS trench technology, which is especially
used to minimize on-state resistance. This device
particularly suits low voltage applications, and low
power dissipation.
20V/6A
RDS(ON) =20mΩ@ VGS=4.5V,ID=4.5A
RDS(ON) =21mΩ@ VGS=3.85V,ID=3.5A
RDS(ON) =26mΩ@ VGS=2.5V,ID=3A
High Density Cell Design For Ultra Low On-Resistance
Surface mount package:SOT23-6L
ME8205
SY