供应 SAMSUNG K9F1G08U0A-PCB0 128M ×8位/ 256M ×8位NAND闪存

FEATURES • Voltage Supply -1.8V device(K9F1G08R0A): 1.65V~1.95V -3.3V device(K9F1G08U0A): 2.7 V ~3.6 V • Organization - Memory Cell Array : (128M + 4,096K)bit x 8bit - Data Register : (2K + 64)bit x8bit - Cache Register : (2K + 64)bit x8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : 2K-Byte - Random Read : 25μs(Max.) - Serial Access : 30ns(Min.) - 3.3v device 50ns(Min.) -1.8v device 128M x 8 Bit /256M x 8 Bit NAND Flash Memory • Fast Write Cycle Time - Program time : 200μs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Cache Program Operation for High Performance Program • Intelligent Copy-Back Operation • Unique ID for Copyright Protection • Package : - K9F1G08U0A-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F1G08U0A-VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9F1G08U0A-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package - K9F1G08U0A-FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9F1G08U0A-V,F(WSOPI ) is the same device as K9F1G08U0A-Y,P(TSOP1) except package type. - K9K2G08U1A-ICB0/IIB0 52-ULGA (12X17X0.65mm)