2SK3878(STA1,E,S) TOSHIBA 东芝 MOS(场效应管) TO-3P

Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) 
• High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) 
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 
Absolute Maximum Ratings (Ta = 25°C) 
Characteristic Symbol Rating Unit 
Drain-source voltage VDSS 900 V 
Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V 
Gate-source voltage VGSS ±30 V 
DC (Note 1) ID 9 
Drain current 
Pulse (Note 1) IDP 27 
A 
Drain power dissipation (Tc = 25°C) PD 150 W 
Single pulse avalanche energy 
 (Note 2) EAS 778 mJ 
Avalanche current IAR 9 A 
Repetitive avalanche energy (Note 3) EAR 15 mJ 
Channel temperature Tch 150 °C 
Storage temperature range Tstg −55 to 150 °C