HGTP7N60A4 IGBT 晶体管

The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.Key Features14A, 600V @ TC = 110°CLow Saturation Voltage : V CE(sat) = 1.9 V @ I C = 7ATypical Fall Time. . . . . . . . . . 75ns at TJ = 125°CLow Conduction Loss