NTTFS5116PLTAG ON 安森美 进口原装 WDFN8 晶体管 MOSFET

EU RoHSCompliant with Exemption ECCN (US)EAR99Part StatusActiveHTS8541.29.00.95Product CategoryPower MOSFETConfigurationSingle Quad Drain Triple SourceChannel ModeEnhancementChannel TypePNumber of Elements per Chip1Maximum Drain Source Voltage (V)60Maximum Gate Source Voltage (V)±20Maximum Continuous Drain Current (A)5.7Maximum Drain Source Resistance (mOhm)52@10VTypical Gate Charge @ Vgs (nC)25@10V|14@4.5V  EU RoHSCompliant with Exemption ECCN (US)EAR99Part StatusActiveHTS8541.29.00.95Product CategoryPower MOSFETConfigurationSingle Quad Drain Triple SourceChannel ModeEnhancementChannel TypePNumber of Elements per Chip1Maximum Drain Source Voltage (V)60Maximum Gate Source Voltage (V)±20Maximum Continuous Drain Current (A)5.7Maximum Drain Source Resistance (mOhm)52@10VTypical Gate Charge @ Vgs (nC)25@10V|14@4.5VTypical Gate Charge @ 10V (nC)25Typical Input Capacitance @ Vds (pF)1258@30VMaximum Power Dissipation (mW)3200Typical Fall Time (ns)37Typical Rise Time (ns)58Typical Turn-Off Delay Time (ns)30Typical Turn-On Delay Time (ns)15Minimum Operating Temperature (°C)-55Maximum Operating Temperature (°C)150PackagingTape and Reel