NCV8402ASTT1G MOSFET 42V 2.0A

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage Internally Clamped VDSS 42 V

Drain−to−Gate Voltage Internally Clamped (RG = 1.0 M) VDGR 42 V

Gate−to−Source Voltage VGS ±14 V

Continuous Drain Current ID Internally Limited

Total Power Dissipation − SOT−223 Version @ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

@ TS = 25°C)

PD 1.1

1.74

8.9

W

Total Power Dissipation − DFN Version @ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

@ TS = 25°C)

PD 0.76

1.78

8.9

W

Maximum Continuous Drain Current − SOT−223 Version @ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

@ TS = 25°C)

ID 1.54

1.94

6.75

A

Maximum Continuous Drain Current − DFN Version @ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

@ TS = 25°C)

ID 1.28

1.97

6.75

A

Thermal Resistance SOT223 Junction−to−Ambient Steady State (Note 1)

SOT223 Junction−to−Ambient Steady State (Note 2)

SOT223 Junction−to−Soldering Point Steady State

DFN Junction−to−Ambient Steady State (Note 1)

DFN Junction−to−Ambient Steady State (Note 2)

DFN Junction−to−Soldering Point Steady State

RJA

RJA

RJS

RJA

RJA

RJS

114

72

14

163

70

14

°C/W

Single Pulse Drain−to−Source Avalanche Energy

(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 )

EAS 150 mJ

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 , RL = 9.0 , td = 400 ms) VLD 55 V

Operating Junction Temperature TJ −40 to 150 °C

Storage Temperature Tstg −55 to 150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should