射频PTVA102001EA V1 R0

PTVA102001EA V1 R0 Description

ThePTVA102001EA V1 R0 is a 200-watt LDMOS FET intended for use

in power amplifier applications in the 960 to 1600 MHz frequency

band. Features include high gain and thermally-enhanced package

with bolt-down flange. Manufactured with Wolfspeed's advanced

LDMOS process, this device provides excellent thermal performance

and superior reliability

PTVA102001EA V1 R0

Package H-36265-2

Features

• Input matched

• Capable of handling 10:1 VSWR @50 V, 200 W

(CW) output power

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

PTVA102001EA V1 R0规格

制造商: Cree, Inc.

产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管

RoHS:  详细信息  

晶体管极性: N-Channel

技术: Si

Vds-漏源极击穿电压: 105 V

Rds On-漏源导通电阻: 340 mOhms

增益: 18.5 dB

输出功率: 200 W

最大工作温度: + 225 C

安装风格: SMD/SMT

封装 / 箱体: H-36265-2

封装: Cut Tape

封装: MouseReel

封装: Reel

工作频率: 960 MHz to 1600 MHz  

类型: RF Power MOSFET  

商标: Wolfspeed / Cree  

通道数量: 1 Channel  

产品类型: RF MOSFET Transistors  

工厂包装数量: 50  

子类别: MOSFETs  

Vgs - 栅极-源极电压: 10 V