图文详情
产品属性
相关推荐
QQ 916267791
Zowie Technology Corporation Dual Series Switching Diode 3 ANODE 1 CATHODE 2 3 CATHODE/ANODE BAV99 1 2 SOT-23 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectifierd Forward Current (averaged over any 20 ms period) Repetitive Peak Forward Current Non-Repetitive Peak Forward Curretn t=1.0 uS t=1.0 mS t=1.0 S (1) Symbol VR IF IFM( surge ) VRRM IF( AV ) IFRM IFSM Value0 2.0 1.0 0.5 Unit Vdc mAdc mAdc Vdc mAdc mAdc A THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) Symbol TA=25 C o Max. 225 1..4 417 -65 to +150 Unit mW mW / oC o PD R JA Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (2) C/W TA=25 C o PD R JA TJ,TSTG mW mW / oC o C/W o C DEVICE MARKING BAV99=A7 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) (EACH DIODE) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Reverse Breakdown Voltage ( IBR=100uAdc ) ( IF=1.0 mAdc ) ( IF=10 mAdc ) ( IF=50 mAdc ) ( IF=150 mAdc ) ( VR=70 Vdc ) o ( VR=25 Vdc, TJ=150 C ) o ( VR=70 Vdc, TJ=150 C ) V(BR) 2..5 6.0 1.75 Vdc Forward Voltage VF mVdc Reverse Voltage Leakage Current Diode Capacitance ( VR=0, f=1.0MHZ ) IR CJ ) trr VFR uAdc pF nS Vdc Reverse Re……
BAV99
NXP(恩智浦)
SOT23
无铅环保型
贴片式
卷带编带包装