H57V2562GTR Document Title 256Mbit (16M x16) Synchronous DRAM 256Mb Synchronous DRAM(16M x 16) FEATURES ● Standard SDRAM Protocol ● Internal 4bank operation ● Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V ● All device pins are compatible with LVTTL interface ● Low Voltage interface to reduce I/O power ● 8,192 Refresh cycles / 64ms ● Programmable CAS latency of 2 or 3 ● Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst ● Commercial Temp : 0o C ~ 70o C Operation ● Package Type : 54_Pin TSOPII ● This product is in compliance with the directive pertaining of RoHS undefined
