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Series 6b: Blue/Green sensitive photodiodes |
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Order # |
Type |
Active Area |
Dark Current |
Rise Time |
||
Chip |
Package |
Size |
Area |
5V |
410nm 5V |
|
mm |
mm2 |
nA |
ns |
|||
501429 |
PS1-6b |
TO52S1 |
1×1 |
1 |
0.05 |
10 |
501430 |
PS1-6b |
LCC6.1 |
1×1 |
1 |
0.05 |
10 |
501297 |
PC5-6b |
TO5 |
Ø2.52 |
5 |
0.1 |
20 |
501242 |
PS7-6b |
TO5 |
2.7×2.7 |
7 |
0.15 |
25 |
501229 |
PC10-6b |
TO5 |
Ø3.57 |
10 |
0.2 |
45 |
501241 |
PS13-6b |
TO5 |
3.5×3.5 |
13 |
0.25 |
50 |
501244 |
PS33-6b |
TO8 |
5.7×5.7 |
33 |
0.6 |
140 |
501258 |
PS100-6b |
LCC10S |
10×10 |
100 |
1 |
200 |
501135 |
PS100-6b |
CERpinE |
10×10 |
100 |
1 |
200 |
501045 |
PS100-6b |
CERpinG |
10×10 |
100 |
1 |
200 |
Band-pass filter modules: PR20-6b TO5i with center wavelength 488nm, 550nm, 633nm, 680nm |
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Series 5b: High speed photodiodes (for Blue-sensitive photodiodes) |
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Order # |
Type |
Active Area |
Dark Current |
Rise Time |
||
Chip |
Package |
Size |
Area |
3.5V |
405nm 3.5V |
|
mm |
mm2 |
nA |
ns |
|||
501424 |
PS1.0-5b |
TO52S1 |
1.0×1.0 |
1 |
0.01 |
1.3 |
501428 |
PS1.0-5b |
LCC6.1 |
1.0×1.0 |
1 |
0.01 |
1.3 |
501425 |
PS7-5b |
TO5 |
2.7×2.7 |
7 |
0.5 |
5 |
501426 |
PC10-5b |
TO5 |
Ø3.57 |
10 |
0.5 |
6 |
501427 |
PS13-5b |
TO5 |
3.5×3.5 |
13 |
1 |
6 |
Series 5t: High speed photodiodes for low voltages (for low operating voltages between 3 and 5V, making them ideal for VIS and NIR applications in conjunction with CMOS components) |
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Order # |
Type |
Active Area |
Dark Current |
Rise Time |
||
Chip |
Package |
Size |
Area |
3.5V |
850nm 3.5V |
|
mm |
mm2 |
nA |
ns |
|||
501126 |
PS0.25-5t |
LCC6.1 |
0.5×0.5 |
0.25 |
0.01 |
0.4 |
501434 |
PS0.25-5t |
SMD1206 |
0.5×0.5 |
0.25 |
0.01 |
0.4 |
501125 |
PC0.55-5t |
LCC6.1 |
Ø0.84 |
0.55 |
0.01 |
1 |
501289 |
PC0.55-5t |
T1 3/4 |
Ø0.84 |
0.55 |
0.01 |
1 |
501290 |
PC0.55-5t |
T1 3/4 black |
Ø0.84 |
0.55 |
0.01 |
1 |
501127 |
PS1-5t |
LCC6.1 |
1.0×1.0 |
1 |
0.01 |
1 |
501432 |
PS7-5t |
TO5 |
2.7×2.7 |
7 |
0.5 |
1 |
Series 5: High speed photodiodes (for fast rise times at low reverse voltages) |
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Order # |
Type |
Active Area |
Dark Current |
Rise Time |
||
Chip |
Package |
Size |
Area |
20V |
850nm 20V |
|
mm |
mm2 |
nA |
ns |
|||
500122 |
PS0.25-5 |
TO52S1 |
0.5×0.5 |
0.25 |
0.1 |
0.4 |
500119 |
PS0.25-5 |
TO52S3 |
0.5×0.5 |
0.25 |
0.1 |
0.4 |
500973 |
PS0.25-5 |
LCC6.1 |
0.5×0.5 |
0.25 |
0.1 |
0.4 |
500116 |
PS0.25-5 |
SMD1206 |
0.5×0.5 |
0.25 |
0.1 |
0.4 |
501257 |
PC0.55-5 |
TO52S1 |
Ø0.84 |
0.55 |
0.2 |
1 |
501124 |
PC0.55-5 |
LCC6.1 |
Ø0.84 |
0.55 |
0.2 |
1 |
500127 |
PS1.0-5 |
TO52S1 |
1.0×1.0 |
1 |
0.2 |
1.5 |
500128 |
PS1.0-5 |
TO52S3 |
1.0×1.0 |
1 |
0.2 |
1.5 |
501128 |
PS1.0-5 |
LCC6.1 |
1.0×1.0 |
1 |
0.2 |
1.5 |
501291 |
PS7-5 |
TO5 |
2.7×2.7 |
7 |
0.5 |
2 |
501218 |
PS11.9-5 |
TO5 |
3.45×3.45 |
11.9 |
1 |
3 |
500097 |
PC20-5 |
TO8 |
Ø5.05 |
20 |
2 |
3.5 |
501292 |
PS33-5 |
TO8 |
5.7×5.7 |
33 |
2 |
3.5 |
501011 |
PS100-5 |
LCC10S |
10×10 |
100 |
2 |
5 |
501433 |
PS100-5 |
CERpinG |
10×10 |
100 |
2 |
5 |
Series 6: IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection) |
||||||
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
||
Chip |
Package |
Size |
Area |
10V |
850nm 10V |
|
mm |
mm2 |
nA |
ns |
|||
500151 |
PC1-6 |
TO52S1 |
Ø1.13 |
1 |
0.05 |
10 |
500482 |
PC1-6 |
TO52S3 |
Ø1.13 |
1 |
0.05 |
10 |
501214 |
PC5-6 |
TO5 |
Ø2.52 |
5 |
0.1 |
13 |
501221 |
PS7-6 |
TO5 |
2.66×2.66 |
7 |
0.1 |
15 |
501193 |
PC10-6 |
TO5 |
Ø3.57 |
10 |
0.2 |
20 |
501246 |
PS13-6 |
TO5 |
3.5×3.5 |
13 |
0.2 |
20 |
500113 |
PC20-6 |
TO8 |
Ø5.05 |
20 |
0.3 |
25 |
501298 |
PS33-6 |
TO8 |
5.7×5.7 |
33 |
0.4 |
25 |
500103 |
PC50-6 |
TO8S |
Ø7.98 |
50 |
0.5 |
30 |
500082 |
PC100-6 |
BNC |
Ø11.28 |
100 |
1 |
40 |
501264 |
PS100-6 |
BNC |
10×10 |
100 |
1 |
40 |
501435 |
PS100-6 |
LCC10S |
10×10 |
100 |
1 |
40 |
500149 |
PS100-6 |
CERpinG |
10×10 |
100 |
1 |
40 |
Series 7: IR photodiodes with fully depletable (very low capacitance levels) |
||||||
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
||
Chip |
Package |
Size |
Area |
10V |
905nm 10V |
|
mm |
mm2 |
nA |
ns |
|||
501285 |
PC5-7 |
TO8i |
Ø2.52 |
5 |
0.05 |
45 |
501286 |
PC10-7 |
TO8i |
Ø3.57 |
10 |
0.1 |
50 |
501287 |
PC20-7 |
TO8Si |
Ø5.05 |
20 |
0.2 |
50 |
501317 |
PS100-7 |
LCC10G |
10×10 |
100 |
1.5 |
50 |
Series Q: Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources) |
||||||
Order # |
Type |
Active Area |
Dark Current |
Rise Time |
||
Chip |
Package |
Size |
Area |
150V |
1064nm 150v |
|
mm |
mm2 |
nA |
ns |
|||
501446 |
PC10-Q |
TO8i |
Ø3.57 |
10 |
0.5 |
14 |
501447 |
PC20-Q |
TO8Si |
Ø5.05 |
20 |
1 |
14 |
501273 |
PS100-Q |
LCC10G |
10×10 |
100 |
80 |
14 |
501448 |
PC50-Q |
TO8Si |
Ø8 |
50 |
2.5 |
14 |
光电二极管
HONEYWELL(霍尼韦尔)
a
b