供应IR英飞凌 IHW20N135R3 IGBT晶体管

IR英飞凌 IHW20N135R3 IGBT晶体管

制造商:Infineon

产品种类:IGBT 晶体管

 技术:Si

封装 / 箱体:TO-247-3

安装风格:Through Hole

配置:Single

集电极—发射极最大电压 VCEO:1350 V

集电极—射极饱和电压:1.6 V

栅极/发射极最大电压:+/- 20 V

在25 C的连续集电极电流:40 A

Pd-功率耗散:310 W

最小工作温度:- 40 C

最大工作温度:+ 175 C

系列:RC

封装:Tube

商标:Infineon Technologies

 栅极—射极漏泄电流:100 nA

 产品类型:IGBT Transistors 

工厂包装数量:240 

子类别:IGBTs 

商标名:TRENCHSTOP

 零件号别名:IHW20N135R3FKSA1 IHW2N135R3XK SP 

单位重量:6 g

IHW20N135R3 IGBT晶体管

Features:

•Offersnewhigherbreakdownvoltageto1350Vforimproved

reliability

•Powerfulmonolithicbodydiodewithlowforwardvoltage

designedforsoftcommutationonly

•TRENCHSTOPTMtechnologyoffering:

-verytightparameterdistribution

-highruggedness,temperaturestablebehavior

-lowVCEsat

-easyparallelswitchingcapabilityduetopositive

temperaturecoefficientinVCEsat

•LowEMI

•QualifiedaccordingtoJESD-022fortargetapplications

•Pb-freeleadplating;RoHScompliant

•Halogenfree(accordingtoIEC61249-2-21)

Applications:

•Inductivecooking

•Inverterizedmicrowaveovens

•Resonantconverters

•Softswitchingapplications

Packagepi

IGBT晶体管   IGBT晶体管