NCE3010S

The NCE3010S uses advanced trench technology and
design to provide excellent R DS(ON) with low gate charge. It

can be used in a wide variety of applications.

V DS =30V,I D =10A
R DS(ON) < 12mΩ @ V GS =10V
R DS(ON) <16mΩ @ V GS =4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply