低压MOS管，AOS

AO4606
Complementary Enhancement Mode Field Effect Transistor

General Description
The AO4606 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch,
and for a host of other applications.

Features
n-channel p-channel
VDS (V) = 30V -30V
ID = 6.9A -6A
RDS(ON) RDS(ON)
< 28mΩ (VGS=10V) < 35mΩ (VGS = 10V)
< 42mΩ (VGS=4.5V) < 58mΩ (VGS = 4.5V)