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强势代理FQPF8N60C 场效应管
TO-220F封装
电流8A,电压600V
PDF规格书:
https://www.hbic.cn/aoke/down/fqpf8n60c.pdf
广泛应用于:风扇控制板,控制电源,LED驱动电源,路灯电源,灯杯电源,LCD电源、机箱电源、逆变器
www.aokehk.com
诚征分销商.
600V N-Channel MOSFET
Features
■ 7.5A,600V,RDS(on)=1.0?@VGS=10V
■ Low gate charge
■ Low Crss (t*ical 23pF)
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability
■ ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
*ology.
AOKE
FQPF8N60C
结型(JFET)
N沟道
耗尽型
A/宽频带放大
CER-DIP/陶瓷直插
ALGaAS铝镓砷
1(V)
1(V)
1(pF)
1(dB)
1(mA)
1(mW)