AOD464

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AOD464  (1)



20130626_173858

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AOD464
N-Channel Enhancement Mode Field Effect Transistor.

General Description
The AOD464 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOD464 is Pbfree
(meets ROHS & Sony 259 specifications).
AOD464L is a Green Product ordering option. AOD464
and AOD464L are electrically identical.

Features
VDS (V) = 105V
ID = 40 A (VGS =10V)
RDS(ON) < 28 mΩ (VGS =10V) @ 20A
RDS(ON) < 31 mΩ (VGS = 6V)

品牌/商标

AOS/美国万代

型号/规格

AOD464

种类

*缘栅(MOSFET)

沟道类型

N沟道

导电方式

耗尽型

用途

MOS-FBM/全桥组件

封装外形

SMD(SO)/表面封装

材料

N-FET硅N沟道

属性

属性值