代理上海贝岭场效应管（MOSFET）BLM2008E

Description
The BLM2008E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =6A
RDS(ON) < 30m
@ VGS=2.5V
RDS(ON) < 24m
@ VGS=4.5V
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM application
●Load switch