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2SC3279 TRANSISTOR (NPN)
FEATUR*
z High DC current gain and excellent hFE linearity
z Low saturation voltage
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 10 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current –Continuous 2 A
PC Collector Power Dissipation 750 mW
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃
1 2 3
TO-92
1. EMITTER
2. COLLE*OR
3. BASE
放大
国产
2CS3279
硅(Si)
TO-92
*
25
大功率